Hydrogen ion sensors based on indium tin oxide thin film using radio frequency sputtering system

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 4805-4809

  Chiang, Jung Lung ^a   Jhan, Syun Sheng ^b   Hsieh, Shu Chen ^a   Huang, An Li ^a  

^a CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

^b LING TUNG UNIVERSITY   (Taiwan)

Author keywords

EGFET; ITO; pH sensitivity; Sputtering system

Indexed keywords

CURRENT SENSITIVITY; EGFET; EXTENDED-GATE FIELD-EFFECT TRANSISTORS; GRAIN SIZE; HYDROGEN IONS; INDIUM TIN OXIDE THIN FILMS; ITO; KEITHLEY; MOS-FET; PH SENSITIVITY; RADIO FREQUENCY SPUTTERING; SEMICONDUCTOR PARAMETERS; SENSING PROPERTY; SI SUBSTRATES; SPUTTERING SYSTEM; STANDARD METAL; VOLTAGE SENSITIVITY;

ACOUSTIC RESONATORS; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; HYDROGEN; INDIUM; MOSFET DEVICES; OXIDE FILMS; PH SENSORS; PHOTOLITHOGRAPHY; RADIO; RADIO WAVES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON; THIN FILMS; TIN;

PH EFFECTS;

EID: 65749119035     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.050     Document Type: Article

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