Lasers solutions for wafer and thin-film annealing

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 10, 2008, Pages 3215-3220

  Paetzel, Rainer ^a   Turk, Brandon ^b   Brune, Jan ^a   Govorkov, Sergei ^b   Simon, Frank ^a  

^a Coherent GmbH ^*  (Germany)

^b Research and Development Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION OF LASER; CMOS NODES; CW-LASER; DAMAGE HEALING; DOPANT ACTIVATION; EXACT CONTROLS; EXCIMER LASER ANNEALING; FLUENCES; HIGH-POWER; IMPLANT DAMAGE; INTERACTION TIME; IRRADIATED MATERIALS; JUNCTION DEPTH; LARGE DOMAIN; LASER ANNEALING; LASER PARAMETERS; LASER SOURCES; MATERIAL CHARACTERISTICS; MICRO-ELECTRONIC DEVICES; OUTPUT POWER; POWER MOSFET; PULSE DURATIONS; PULSE TRAIN; SEMICONDUCTOR INDUSTRY; SINGLE LASER PULSE; SOURCE/DRAIN JUNCTIONS; TEMPERATURE PROFILES; VISIBLE-WAVELENGTH RANGE;

ANNEALING; EXCIMER LASERS; FLAT PANEL DISPLAYS; GAS LASERS; LOCOMOTIVES; MICROELECTRONICS; PULSED LASER APPLICATIONS; Q SWITCHED LASERS; RAILROAD CARS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES; SILICON WAFERS; TECHNICAL PRESENTATIONS;

SEMICONDUCTOR LASERS;

EID: 65649111815     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779519     Document Type: Conference Paper

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