Study on the machining performance of single crystal silicon wafer cut by using reciprocating electroplated diamond wire saw

Rengong Jingti Xuebao/Journal of Synthetic Crystals

Volumn 38, Issue 2, 2009, Pages 372-377

  Gao, Yu Fei ^a   Ge, Pei Qi ^a   Li, Shao Jie ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Diamond wire saw; Machining quality; Monocrystalline silicon; Wafer

Indexed keywords

BRITTLE REGIMES; DIAMOND WIRE SAW; FEED SPEED; LAYER THICKNESS; MACHINING PERFORMANCE; MACHINING PROCESS; MACHINING QUALITY; MONOCRYSTALLINE SILICON; MONOCRYSTALLINE SILICON WAFERS; ON WAFERS; SAW SPEED; SILICON WAFER SURFACES; SINGLE-CRYSTAL SILICON WAFERS; SUB SURFACE DAMAGES; TOTAL THICKNESS VARIATIONS; WAFER; WAFER WARPAGE; WARPAGE;

DIAMOND CUTTING TOOLS; DIAMONDS; INGOTS; MACHINING; NONMETALS; SAWING; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; SPEED; SURFACE PROPERTIES; SURFACE ROUGHNESS; WIRE;

SILICON WAFERS;

EID: 65549101157     PISSN: 1000985X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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