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Volumn 517, Issue 15, 2009, Pages 4329-4335
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Interfacial microstructure and defect analysis in Cu(In,Ga)Se([sub]2)-based multilayered film by analytical transmission electron microscopy and focused ion beam
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Author keywords
Focused ion beam; Interface; Multilayers; Solar cells; Transmission electron microscopy
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Indexed keywords
3-DIMENSIONAL;
ADJACENT LAYERS;
ANALYTICAL TRANSMISSION ELECTRON MICROSCOPIES;
BACK CONTACTS;
CDS LAYERS;
CRACK INITIATION SITES;
CROSS-SECTIONAL TEM;
CU DIFFUSIONS;
CU(IN , GA)SE;
DEFECT ANALYSIS;
ENERGY DISPERSIVE X-RAY SPECTROSCOPIES;
GLASS SUBSTRATES;
INTERFACE;
INTERFACE MICROSTRUCTURES;
INTERFACE SEPARATIONS;
INTERFACIAL MICROSTRUCTURES;
INTERFACIAL STRUCTURES;
MICRO-SCALE;
MULTI-LAYERED FILMS;
SEM;
SMALL PARTICLES;
SUB SURFACES;
TEM;
TEM (TRANSMISSION ELECTRON MICROSCOPY);
THERMAL EXPANSION CO-EFFICIENT;
BEAM PLASMA INTERACTIONS;
CADMIUM COMPOUNDS;
CELL MEMBRANES;
COPPER;
CRACKS;
ELECTRONS;
FOCUSED ION BEAMS;
INTERFACIAL ENERGY;
ION BOMBARDMENT;
IONS;
MICROSTRUCTURE;
MOLYBDENUM;
MULTILAYERS;
PHOTOVOLTAIC CELLS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING CADMIUM COMPOUNDS;
SILICON COMPOUNDS;
SOLAR CELLS;
SOLAR ENERGY;
SURFACE DIFFUSION;
THERMAL EXPANSION;
TRANSMISSION ELECTRON MICROSCOPY;
TWO DIMENSIONAL;
ELECTRON MICROSCOPES;
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EID: 65449186554
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.02.130 Document Type: Article |
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Times cited : (4)
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References (16)
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