Energy dependence corrections to MOSFET dosimetric sensitivity

Australasian Physical and Engineering Sciences in Medicine

Volumn 32, Issue 1, 2009, Pages 16-20

  Cheung, T ^a   Butson, Martin J ^a,b   Yu, P K N ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b Illawarra Cancer Care Centre   (Australia)

Author keywords

Energy response; In vivo dosimetry; MOSFET; Radiotherapy; Sensitivity

Indexed keywords

AVERAGE LIVES; DOSE ASSESSMENTS; ENERGY DEPENDENCES; ENERGY RESPONSE; HIGH SENSITIVITIES; IN-VIVO DOSIMETRY; LOWER ENERGIES; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; MOSFET; MOSFET DETECTORS; NON-LINEAR; RADIATION ENERGIES; RADIOTHERAPY TREATMENTS; SECOND-ORDER POLYNOMIALS; SENSITIVITY; SENSITIVITY VARIATIONS; X-RAY ENERGIES; X-RAY RADIATIONS;

CHARGE COUPLED DEVICES; CHIP SCALE PACKAGES; DOSIMETERS; DOSIMETRY; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; RADIATION DECONTAMINATION; RADIOTHERAPY; SEMICONDUCTOR MATERIALS; SENSITIVITY ANALYSIS;

MOSFET DEVICES;

METAL OXIDE;

ACCURACY; AGE; ARTICLE; DOSIMETER; DOSIMETRY; ENERGY; LOW ENERGY RADIATION; MATERIAL COATING; PHANTOM; RADIATION FIELD; RADIOSENSITIVITY; REPRODUCIBILITY; SEMICONDUCTOR; X RAY;

DOSE-RESPONSE RELATIONSHIP, RADIATION; RADIOMETRY; THERMODYNAMICS; TRANSISTORS, ELECTRONIC; X-RAYS;

EID: 65349186048     PISSN: 01589938     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03178623     Document Type: Article

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