Monolithic 1.58-micron InAs/InP quantum dash passively modelocked lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7211, Issue , 2009, Pages

  Lin, C Y ^a   Xin, Y C ^a   Naderi, N A ^a   Chiragh, F L ^a   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Mode locked Lasers; Quantum Dash; Semiconductor lasers

Indexed keywords

ACTIVE REGIONS; CAVITY DESIGNS; CAVITY GEOMETRIES; CAVITY LENGTHS; HIGHLY REFLECTIVE COATINGS; INAS; INAS/INP; INP SUBSTRATES; INPUT DATUM; LOSS CHARACTERISTICS; MATERIALS SYSTEMS; MICROWAVE PHOTONICS; MIRROR FACETS; MODAL GAINS; MODE-LOCKED LASERS; OPTIMAL DEVICES; PASSIVELY MODE-LOCKED LASERS; QUANTUM DASH; QUANTUM WELLS; RELATIVE LENGTHS; REPETITION RATES; RIDGE WAVEGUIDES; SEGMENTED CONTACT METHODS; SEGMENTED WAVEGUIDES; SEMICONDUCTOR MODE-LOCKED LASERS; THEORETICAL EQUATIONS; WIRE BONDINGS;

ALUMINUM; ELECTRIC CONDUCTIVITY; ELECTROOPTICAL DEVICES; HETEROJUNCTIONS; INDIUM ARSENIDE; LASERS; OPTOELECTRONIC DEVICES; REFLECTIVE COATINGS; SEMICONDUCTING INDIUM; WAVEGUIDES;

QUANTUM WELL LASERS;

EID: 65349174008     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809640     Document Type: Conference Paper

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