Monolithic 1.55m GaInNAsSb quantum well passively modelocked lasers

Electronics Letters

Volumn 44, Issue 9, 2008, Pages 581-582

  Xin, Y C ^a   Lin, C Y ^a   Li, Y ^a   Bae, H P ^b   Yuen, H B ^b   Wistey, M A ^b,c   Harris, J S ^b   Bank, S R ^b,d   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b STANFORD UNIVERSITY   (United States)

^c University of California   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; SEMICONDUCTOR LASERS;

MODELOCKED LASERS; OPTICAL PULSE WIDTH; REPETITION RATE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 42449165102     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080362     Document Type: Article

References (10)

1. Keeler, G.A., Nelson, B.E., Agarwal, D., Debaes, C., Helman, N.C., Bhatnagar, A., and Miller, D.A.B.: ' The benefits of ultrashort optical pulses in optically interconnected systems ', IEEE J. Sel. Top Quantum Electron., 2003, 9, (2), p. 477-485 10.1109/JSTQE.2003.813317 1077-260X
2. Kolner, B.H., and Bloom, D.M.: ' Electrooptic sampling in GaAs integrated-circuits ', IEEE J. Quantum Electron., 1986, 22, (1), p. 79-93 10.1109/JQE.1986.1072877 0018-9197
3. Rafailov, E.U., Cataluna, M.A., and Sibbett, W.: ' Mode-locked quantum-dot lasers ', Nature Photonics, 2007, 1, (7), p. 395-401
4. Xin, Y.C., Li, Y., Kovanis, V., Gray, A.L., Zhang, L., and Lester, L.F.: ' Reconfigurable quantum dot monolithic multisection passive mode-locked lasers ', Opt. Express, 2007, 15, (22), p. 7623-7633 1094-4087
5. Lelarge, F., Dagens, B., Renaudier, J., Brenot, R., Accard, A., van Dijk, F., Make, D., Le Gouezigou, O., Provost, J.G., Poingt, F., Landreau, J., Drisse, O., Derouin, E., Rousseau, B., Pommereau, F., and Duan, G.H.: ' Recent advances on InAs/InP quantum dash based, semiconductor lasers and optical amplifiers operating at 1.55m ', IEEE J. Sel. Top Quantum Electron., 2007, 13, (1), p. 111-124 10.1109/JSTQE.2006.887154 1077-260X
6. Bank, S.R., Wistey, M.A., Yuen, H.B., Goddard, L.L., Ha, W., and Harris, J.S.: ' Low-threshold CW GaInNAsSb/GaAs laser at 1.49m ', Electron. Lett., 2003, 39, p. 1445-1446 10.1049/el:20030928 0013-5194
7. Bank, S.R., Bae, H.P., Yuen, H.B., Wistey, M.A., Goddard, L.L., and Harris, J.S.: ' Room-temperature continuous-wave 1.55m GalnNAsSb laser on GaAs ', Electron. Lett., 2006, 42, p. 156-157 10.1049/el:20064022 0013-5194
8. Xin, Y.C., Li, Y., Martinez, A., Rotter, T.J., Su, H., Zhang, L., Gray, A.L., Luong, S., Sun, K., Zou, Z., Zilko, J., Varangis, P.M., and Lester, L.F.: ' Optical gain and absorption of quantum dots measured using an alternative segmented contact method ', IEEE J. Quantum Electron., 2006, 42, p. 725-732 10.1109/JQE.2006.876709 0018-9197
9. Huang, X.D., Stintz, A., Li, H., Lester, L.F., Cheng, J., and Malloy, K.J.: ' Passive mode-locking in 1.3m two-section InAs quantum dot lasers ', Appl. Phys. Lett., 2001, 78, p. 2825-2827 10.1063/1.1371244 0003-6951
10. Palaski, J., and Lau, K.Y.: ' Parameter ranges for ultrahigh frequency mode-locking of semiconductor-lasers ', Appl. Phys. Lett., 1991, 59, p. 7-9 10.1063/1.105529 0003-6951