Extended reliability study of high density PZT capacitors: Intrinsic lifetime determination and wafer level screening strategy

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 433-438

  Bouyssou, E ^a   Guegan G ^a   Bruyere S ^a   Pezzani, R ^a   Berneux, L ^a   De Morais, L Dantas ^a   Rebrasse J P ^a   Anceau, C ^a   Nopper, C ^a  

^a STMICROELECTRONICS   (France)

Author keywords

Capacitors; Lifetime; PZT; Reliability; Screening; WLR

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROCHEMICAL ETCHING; FAILURE ANALYSIS; MATHEMATICAL MODELS; RELIABILITY ANALYSIS;

INTRINSIC FAILURE MECHANISMS; RELIABILITY MODELS; SPECIFIC CAPACITANCE; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

CAPACITANCE MEASUREMENT;

EID: 34548750985     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369929     Document Type: Conference Paper

References (6)

1. Bouyssou E, Jérisian R, Cézac N, Leduc P, Guégan G and Anceau C, Journal of Material Science and Engineering B, 118, 28-331, (2005)
2. Wu EY, and Vollertsen RP, On the Weibull Shape Factor of Intrinsic Breakdown of Dielectric Films and Its Accurate Experimental Determination-Part I: Theory, Methodology, Experimental Techniques, IEEE Transactions on Electron Devices, Vol. 49, No 12, pp. 2131-2140 (2002)
3. Stathis JH, Journal of applied physics 86, no 10 (1999)
4. Degraeve R, Groeseneken G, Bellens R, Ogier JL, Depas M, Roussel PJ and Maes HE, New insights in the relation between electrontrap generation and the statistical properties of oxide breakdown, IEEE Trans. Electron Devices, vol. 45, pp. 904-911 (1998)
5. Shye DC, Chiou BS, Lai MJ, Hwang CC, Jiang CC, Chen JS, Cheng MH and Cheng HC, Journal of the Electrochemical Society, 150 (2), 20-F27, (2003)
6. Felix JA, Shaneyfelt MR, Fleetwood DM, Schwank JR, Dodd PE, Gusev EP, Fleming RM and D'Ernie C, IEEE Transactions on nuclear science 51, 6 (2004)