Ballistic effects up to room temperature in microscopic Hall sensors

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Jouault, B ^a,b   Desrat, W ^a   Couturaud, O ^a   Contreras, S ^a,b   Mailly, D ^b   Mosser, V ^c   Zawadzki, W ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CNRS   (France)

^c ITRON   (France)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAAS/INGAAS/GAAS; BEND RESISTANCES; HALL RESISTANCES; HALL SENSORS; HALL VOLTAGES; HETEROSTRUCTURES; LOW TEMPERATURES; MONTE CARLO SIMULATIONS; NON LINEARITIES; NONLINEAR DEPENDENCES; ROOM TEMPERATURES; TEMPERATURE STUDIES;

BALLISTICS; HALL EFFECT; HALL EFFECT DEVICES; MAGNETIC FIELD EFFECTS; MONTE CARLO METHODS; SENSORS;

THERMAL EFFECTS;

EID: 65249174458     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103303     Document Type: Article

References (19)

1. G. Boero, M. Demierre, P. -A. Besse, and R. S. Popovic, Sens. Actuators, A 0924-4247 10.1016/S0924-4247(03)00192-4 106, 314 (2003).
2. K. Petukhov, W. Wensdorfer, A. -L. Barra, and V. Mosser, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.052401 72, 052401 (2005).
3. A. Oral, J. C. Barnard, S. J. Bending, I. I. Kaya, S. Ooi, T. Tamegai, and M. Henini, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.80.3610 80, 3610 (1998).
4. M. Konczykowski, C. J. van der Beek, A. E. Koshelev, V. Mosser, M. Dodgson, and P. H. Kes, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.97.237005 97, 237005 (2006).
5. A. Oral, S. J. Bending, and M. Henini, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.588514 14, 1202 (1996).
6. B. Jouault, L. Bouguen, S. Contreras, A. Kerlain, and V. Mosser, J. Appl. Phys. 0021-8979 10.1063/1.2968436 104, 053705 (2008).
7. Y. Hirayama and S. Tarucha, Appl. Phys. Lett. 0003-6951 10.1063/1.110799 63, 2366 (1993).
8. M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, and M. Inoue, Phys. Status Solidi C 5, 107 (2008). 0003-6951
9. G. M. Jones, C. H. Yang, M. J. Yang, and Y. B. Lyanda-Geller, Appl. Phys. Lett. 0003-6951 10.1063/1.1867554 86, 073117 (2005).
10. A. Pross, A. I. Crisan, S. J. Bending, V. Mosser, and M. Konczykowski, J. Appl. Phys. 0021-8979 10.1063/1.1887828 97, 096105 (2005).
11. L. Lyard, T. Klein, J. Marcus, R. Brusetti, C. Marcenat, M. Konczykowski, V. Mosser, K. H. Kim, B. W. Kang, H. S. Lee, and S. I. Lee, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.180504 70, 180504 (2004).
12. R. S. Popovic, Hall Effect Devices (Taylor & Francis, London, 2003).
13. Y. Hirayama, S. Tarucha, T. Saku, and Y. Horikoshi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.44.3440 44, 3440 (1991).
14. A. M. Chang, T. Y. Chang, and H. U. Baranger, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.63.996 63, 996 (1989).
15. C. J. B. Ford, S. Washburn, M. Büttiker, C. M. Knoedler, and J. M. Hong, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.62.2724 62, 2724 (1989).
16. A. Benoit, C. P. Umbach, R. B. Laibowitz, and R. A. Webb, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.58.2343 58, 2343 (1987).
17. C. W. J. Beenakker and H. van Houten, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.63.1857 63, 1857 (1989).
18. X. -Q. Li and F. M. Peeters, Superlattices Microstruct. 0749-6036 10.1006/spmi.1996.0323 22, 243 (1997).
19. T. Geisel, R. Ketzmerick, and O. Schedletzky, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.69.1680 69, 1680 (1992).