Pulsed laser deposition of bismuth telluride thin film and annealing effects

EPJ Applied Physics

Volumn 46, Issue 2, 2009, Pages

  Farajia, L S ^a   Singh, R P ^a   Allahkarami, M ^a  

^a Oklahoma State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ANNEALING EFFECTS; ATOMIC FORCES; BI2TE3 THIN FILMS; BISMUTH TELLURIDE THIN FILMS; ELECTRICAL CONDUCTIVITIES; IN VACUUMS; LARGE GRAINS; POLYCRYSTALLINE STRUCTURES; PULSED LASERS; ROOM TEMPERATURES; SODA LIME GLASS SUBSTRATES; THERMAL-ANNEALING; THERMOELECTRIC THIN FILMS;

AMORPHOUS MATERIALS; BISMUTH; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN BOUNDARIES; GRAIN GROWTH; PULSED LASER DEPOSITION; SURFACE MORPHOLOGY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANNEALING;

EID: 65249105480     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2009053     Document Type: Article

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