Some properties of very thin Bi2Te3 layers prepared by laser ablation

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 867-871

  Zeipl, R ^a   Pavelka, M ^b   Jelinek M ^b   Chval, J ^b   Lostak P ^c   Zdansky K ^a   Vanis J ^a   Karamazov, S ^c   Vackova S ^d   Walachova J ^a  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c UNIVERSITY OF PARDUBICE   (Czech Republic)

^d CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

IN-VACUUM; KRF EXCIMER LASER; LASER ENERGY DENSITY; MORPHOLOGY AND COMPOSITION; PREPARATION CONDITIONS; ROOM TEMPERATURE; SUBSTRATE TEMPERATURE; THIN LAYERS;

EXCIMER LASERS; SEMICONDUCTOR MATERIALS;

LASER ABLATION;

EID: 36248955142     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306251     Document Type: Conference Paper

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