Channel Hot-Carrier degradation in short channel devices with high-k/metal gate stacks

Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

Volumn , Issue , 2009, Pages 238-241

  Amat, E ^b   Kauerauf, T ^a   Degraeve, R ^a   Rodriguez R ^b   Nafria M ^b   Aymerich, X ^b   Groeseneken, G ^c  

^a CMOS Device Research Group   (Belgium)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

High k; Hot carrier degradation; Reliability; Short channel devices

Indexed keywords

CMOS TECHNOLOGIES; GATE STACKS; HIGH-K; HOT-CARRIER; HOT-CARRIER DEGRADATION; LONG CHANNEL TRANSISTORS; OPERATING VOLTAGES; SHORT CHANNEL DEVICES; SHORT CHANNEL TRANSISTORS; SHORT-CHANNEL EFFECTS; STRESS CONDITIONS;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; LOGIC GATES; MOSFET DEVICES; SILICON COMPOUNDS; TRANSISTORS; UNMANNED AERIAL VEHICLES (UAV);

DEGRADATION;

EID: 64949160347     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2009.4800475     Document Type: Conference Paper

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