Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

Applied Physics Letters

Volumn 89, Issue 21, 2006, Pages

  Rauter, P ^a   Fromherz, T ^a   Bauer, G ^a   Vinh, N Q ^b   Murdin, B N ^c   Phillips, J P ^d   Pidgeon, C R ^d   Diehl, L ^e   Dehlinger, G ^e   Grutzmacher D ^e  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d HERIOT WATT UNIVERSITY   (United Kingdom)

^e PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (OPTICAL); HETEROJUNCTIONS; OPTICAL PUMPING; PHONONS; PHOTOCURRENTS; SILICON COMPOUNDS;

INTERSUBBAND HOLE RELAXATION; INTERSUBLEVEL SPACING; VALENCE BANDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845461444     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2397004     Document Type: Article

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