Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy

Semiconductor Science and Technology

Volumn 20, Issue 10, 2005, Pages

  Pidgeon, C R ^a   Phillips, P J ^a   Carder, D ^a   Murdin, B N ^b   Fromherz, T ^c   Paul, D J ^d   Ni, Wei Xin ^e   Zhao, Ming ^e  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

PHONONS; SILICON COMPOUNDS;

DECAY TIME; HEAVY HOLE TO LIGHT HOLE INTRAWELL SUBBAND TRANSITION (HH1-LH1); OPTICAL PHONON ENERGY; PUMP/PROBE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 25444493141     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/10/L02     Document Type: Article

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