Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Zhao, H ^a,b   Rustagi, S C ^a   Singh, N ^a   Ma, F J ^b   Samudra, G S ^b   Budhaaraju, K D ^a   Manhas, S K ^a   Tung, C H ^a   Lo, G Q ^a   Baccarani, G ^c   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; CHANNEL CARRIERS; CHARGE-BASED CAPACITANCE MEASUREMENTS; ELECTRICAL CHARACTERIZATIONS; I-V CHARACTERISTICS; MIXED-MODE SIMULATIONS; NANO-WIRE TRANSISTORS; ON CHIPS; ROOM TEMPERATURES; SILICON NANOWIRES; SINGLE CHANNELS;

CAPACITANCE MEASUREMENT; ELECTRON DEVICES; MOSFET DEVICES; NANOWIRES;

CAPACITANCE;

EID: 64549099308     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796810     Document Type: Conference Paper

References (11)

1. T. Tesuka et al., "Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching", IEDM 2007, pp887-890
2. S. D. Suk et al., "Investigation of nanowire size dependency on TSNWFET", IEDM 2007, pp.891-894
3. Ryan Tu, Li Zhang, Yoshio Nishi, and Hong'ie Dai, "Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment", Nano Lett., 7-6, pp1561-1565, 2007
4. J.C. Chen, B.W. McGaughy, D. Sylvester, and C. Hu, "An on-chip, attofarad interconnec charge-based capacitance measurement (CBCM) technique", Proceedings of IEDM '96, pp.69-72B.
5. H. Zhao et al., "Accuracy Assessment of Charge-Based Capacitance Measurement for Nanoscale MOSFET Devices", SSDM 2008, in press
6. H. Zhao et al., "Charge Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD Simulations", unpublished.
7. Y. W. Chang et al., "Charge-based capacitance measurement for bias- dependent capacitance", IEEE Ele. Dev. Lett. 27(3), pp.390-392
8. N. Singh et al., "Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance", IEDM 2006, 1-4
9. F. Dauge et al., "Coupling effects and channels separation in FinFETs", Solid-State Electronics, 48-4, pp. 535-542
10. B. Peirce, "Criterion for the Re'ection of Doubtful Observations", Astronomical Journal, II-45, pp.161-163, 1852
11. A. Savitzky & M. Golay, ''Smoothing and differentiation of data by simplified least squares procedures'' Analytical Chem., 36-8, pp. 1627-1639, 1964