Low-damage low- k etching with an environmentally friendly C F3 i plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 875-880

  Soda, Eiichi ^a   Kondo, Seiichi ^a   Saito, Shuichi ^a   Ichihashi, Yoshinari ^b   Sato, Aiko ^b   Ohtake, Hiroto ^b   Samukawa, Seiji ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENVIRONMENTALLY-FRIENDLY; GLOBAL-WARMING POTENTIAL (GWP);

EID: 46449130841     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2919137     Document Type: Article

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