Double sided bulk micromachining of SOI films using room temperature oxygen plasma assisted bonding

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4755, Issue , 2002, Pages 648-659

  Sanz Velasco, Anke ^a   Rödjegård, Henrik ^a   Andersson, Gert I ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Accelerometer; Bulk micromachining; CMOS compatibility; Room temperature wafer bonding; SOI

Indexed keywords

ACCELEROMETERS; ANISOTROPY; CMOS INTEGRATED CIRCUITS; MICROMACHINING; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SILICON WAFERS;

PLASMA ASSISTED BONDING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 6444244873     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.462867     Document Type: Conference Paper

References (10)

1. High resolution double gate transistor for oscillating structures
2. A novel 3-axis monolithic silicon accelerometer
3. Three dimensional vector accelerometer using SOI structure for high temperature
4. Resonant silicon accelerometers in bulk micromachining technology - An approach
5. Wafer bonding using oxygen plasma bonding in RIE and ICP RIE
6. Aluminium passivation for TMAH based anisotropic etching for MEMS applications
7. Bonding of silicon wafers for silicon-on-insulator