Resonant silicon accelerometers in bulk micromachining technology - An approach

Journal of Microelectromechanical Systems

Volumn 5, Issue 2, 1996, Pages 122-130

  Burrer, Christian ^a,b,c,d   Esteve, Jaume ^a,e,f,g   Lora Tamayo, Emilio ^{a,c,h,i,j,k,l,m,n}  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d SIEMENS AG   (Germany)

^e UNIVERSITY OF BARCELONA   (Spain)

^f IMEC   (Belgium)

^g CNM's Dept Silicon Technol M

^h DEA   (France)

ⁱ Polytechnic of Madrid University   (Spain)

^j CSIC   (Spain)

^k LAAS CNRS   (France)

^l CEA LETI   (France)

^m LAAS ^*

ⁿ Microsystems Technology Department

more..

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION MEASUREMENT; CLOSED LOOP CONTROL SYSTEMS; MECHANICAL PROPERTIES; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; RESISTORS; SENSORS; SILICON WAFERS; STRAIN;

PIEZORESISTORS; RESONANT ACCELERATION SENSORS; RESONANT SILICON ACCELEROMETERS; SILICON BEAM;

ACCELEROMETERS;

EID: 0030174027     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.506200     Document Type: Article

References (28)

1. R. J. Wilfinger, P. H. Bardell, and D. S. Chhabra, "The resonistor: A frequency selective device utilizing the mechanical resonance of a silicon substrate," IBM J. Res. Develop., vol. 12, pp. 113-118, 1968.
2. K. Petersen, F. Pourahmadi, J. Brown, P. Parsons, M. Skinner, and J. Tudor, "Resonant beam pressure sensor fabricated with silicon fusion bonding," in Proc. 6th. Int. Conf. Solid-State Sensors and Actuators (Transducers '91), 1991, pp. 664-667.
3. J. Greenwood and T. Wray, "High accuracy pressure measurement with a silicon resonant sensor," Sens. Actuators A, vols. 37-38, pp. 82-85, 1993.
4. T. S. J. Lammerink and W. Wlodarski, "Integrated thermally excited resonant diaphragm pressure sensor," in Proc. 3rd Int. Conf. Solid-State Sensors and Actuators (Transducers '85), 1985, pp. 97-100.
5. E. Stemme and G. Stemme, "A balanced resonant pressure sensor," Sens. Actuators, vols. A21-23, pp. 346-351, 1990.
6. H. Bartelt and H. Unzeitig, "Design and investigation of micromechanical bridge structures for an optical pressure sensor with temperature compensation," Sens. Actuators A, vols. 37-38, pp. 167-170, 1993.
7. R. G. Kirman, "A vibrating quartz force sensor," in Proc. Transducer Tempcon Conf., 1983, pp. 97-121.
8. C. J. van Mullem, F. R. Blom, J. H. J. Fluitman, and M. Elwenspoek, "Piezoelectrically driven silicon beam force sensor," Sens. Actuators A, vols. 25-27, pp. 379-383, 1991.
9. Th. Fabula, H.-J. Wagner, B. Schmidt, and S. Büttgenbach, "Triple-beam resonant silicon force sensor based on piezoelectric thin films," Sens. Actuators A, vols. 41-42, pp. 375-380, 1994.
10. D. W. Satchell and J. C. Greenwood, "A thermally-excited silicon accelerometer," Sens. Actuators, vol. A17, pp. 241-245, 1989.
11. S. C. Chang, M. W. Putty, D. B. Hicks, C. L. Li, and R. T. Howe, "Resonant-bridge two-axis microaccelerometer," Sens. Actuators, vols. A21-23, pp. 342-345, 1990.
12. M. B. Othman and A. Brunnschweiler, "Electrothermally excited silicon beam mechanical resonators," Electron. Lett., vol. 23, pp. 728-730, 1987.
13. C. Burrer and J. Esteve, "High precision BESOI based resonant accelerometer," Sensors and Actuators A, to be published.
14. _, "A novel resonant silicon accelerometer in bulk-micromachining technology," Sens. Actuators, vol. A46, pp. 185-189, 1995.
15. _, "Thermally driven micromechanical bridge resonators," Sens. Actuators, vol. A42, pp. 680-684, 1994.
16. C. Cané, F. Campabadal, J. Esteve, A. Götz, J. Santander, C. Burrer, J. A. Plaza, L. Pahun, and S. Marco, "A technology for the monolithic fabrication of a pressure sensor and related circuitry," Sens. Actuators, vol. A46, pp. 133-136, 1995.
17. J. B. Lasky, "Wafer bonding for silicon-on-insulator technologies," Appl. Phys. Lett., vol. 49, pp. 78-80, 1986.
18. A. Merlos, M. C. Acero, M. H. Bao, J. Bausells, and J. Esteve, "A study of the undercutting characteristics in the TMAH:IPA system," J. Micromech. Microeng., vol. 2, pp. 181-183, 1992.
19. B. Kloeck, S. D. Colins, N. F. de Rooij, and R. L. Smith, "Study of electrochemical etch-stop for high-precision thickness control of silicon membranes," IEEE Trans. Electron Devices, vol. 36, pp. 663-669, 1989.
20. S. Marco, J. Samitier, J. R. Morante, A. Götz, and J. Esteve, "Three-dimensional structures obtained by double diffusion and electrochemical etch stop," J. Micromech. Microeng., vol. 3, pp. 141-142, 1993.
21. M. Bao, C. Burrer, J. Esteve, J. Bausells, and S. Marco, "Etching front control of 〈110〉 strips for corner compensation," Sens. Actuators A, vols. 37-38, pp. 727-732, 1993.
22. G. Wallis and D. I. Pomerantz, "Field assisted glass-metal sealing," J. Appl. Phys., vol. 40, pp. 3946-3949, 1964.
23. C. Burrer, "Design, fabrication and characterization of resonant silicon accelerometers," Ph.D. dissertation, Universidad Autónoma de Barcelona, 1995.
24. R. Mäusl, Analoge Modulationsverfahren, vol. 2. Aufl., Heidelberg: Hüthig Verlag, 1992, p. 81ff.
25. E. Prokott, Modulation und Demodulation. Berlin: Elitera Verlag, 1975, p. 40ff.
26. Handbook of Table of Mathematics, 4th ed. Ohio: Chemical Rubber Co., 1970, p. 740.
27. H. A. C. Tilmans, M. Elwenspoek, and J. H. J. Fluitman, "Micro resonant force gauges," Sens. Actuators A, vol. 30, pp. 35-53, 1992.
28. H. A. C. Tilmans, S. Bouwstra, D. J. Ijntema, M. Elwenspoek, and C. F. Klein, "A differential resonator design using a bossed structure for applications in mechanical sensors," Sens. Actuators A, vols. 25-27, pp. 385-393, 1991.