Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 197-201

  Xu, Yueqin ^a   Nelson, B P ^a   Gedvilas, L M ^a   Reedy, R C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Amorphous silicon germanium alloy; Filament; Optical bandgap; Photo to dark conductivity ratio; Photoresponse; Substrate; Tauc gap

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CONDUCTIVITY; ENERGY GAP; GROWTH (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

SILICON ALLOYS;

EID: 0037850808     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00110-X     Document Type: Conference Paper

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