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Solid State Communications

Volumn 149, Issue 19-20, 2009, Pages 788-790

Electric force microscope study of InP:Mn for nonvolatile memory application

(3) Park, C S a Son, J Y b Shon, Yoon c

a Seoul National University (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

c Dongguk University (South Korea)

Author keywords

A. Ferroelectrics; A. Semiconductors; B. Epitaxy; D. Dielectric response

Indexed keywords

A. FERROELECTRICS; A. SEMICONDUCTORS; B. EPITAXY; D. DIELECTRIC RESPONSE; DOMAIN SWITCHING; DOMAIN-WALL MOTIONS; ELECTRIC FORCES; FERROELECTRIC HYSTERESIS LOOPS; FERROELECTRIC STATE; INP; LOW ACTIVATIONS; META-STABLE STATE; NON-VOLATILE MEMORY APPLICATIONS; REMANENT POLARIZATIONS;

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC NETWORK ANALYSIS; FERROELECTRICITY; HYSTERESIS; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SINGLE CRYSTALS;

FERROELECTRIC MATERIALS;

EID: 64049113349 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2009.02.031 Document Type: Article

Times cited : (3)

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