Determination of the optimal cation composition of ferroelectric (Zn xCd1-x)S thin films for applications to silicon-based nonvolatile memories

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3180-3182

  Hotta, Y ^a   Rokuta, E ^a   Jhoi, J H ^a   Tabata, H ^a   Kobayashi, H ^a   Kawai, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NUMBERS; CATION COMPOSITION; COERCIVE FIELD; HYSTERETIC BEHAVIOR; HYSTERETIC LOOP; II-VI COMPOUNDS; NON-VOLATILE MEMORIES; REMNANT POLARIZATIONS; S THIN FILMS; SI-BASED; SILICON-BASED;

ATOMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; HYSTERESIS; PHASE CHANGE MEMORY; POLARIZATION; POSITIVE IONS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; ZINC;

CADMIUM COMPOUNDS;

EID: 79956017272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476710     Document Type: Article

References (8)

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