Characterization of electric discharge machining for silicon carbide single crystal

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 855-858

  Kato, Tomohisa ^a   Noro, Toshiya ^b   Takahashi, Hideaki ^c   Yamaguchi, Satarou ^b   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b CHUBU UNIVERSITY   (Japan)

^c Tech HM   (Japan)

Author keywords

Electric discharge machining; Silicon carbide; Single crystal; Wafer processing

Indexed keywords

ELECTRIC DISCHARGES; MONOCRYSTALLINE SILICON; POTASSIUM HYDROXIDE; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS;

CUTTING METHODS; DEFECT PROPAGATION; ELECTRIC DISCHARGE MACHINING (EDM); HIGH TEMPERATURE; HIGH VOLTAGE; SILICON CARBIDES (SIC); SURFACE DAMAGES; WAFER PROCESSING;

ELECTRIC DISCHARGE MACHINING;

EID: 63849220352     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (5)

1. Reported in ICSCRM2007 by S. Yamaguchi et al.
2. T. Kato, T. Ohno. F. Hirose, N. Oyanagi, S. Nishizawa and K. Arai, Materials Science Forum, Vol. 457-460 (2004), p99.
3. S. Nakashima, H. Okumura, T. Yamamoto and R. Shimizu, Appl. Spectrosc, Vol. 58 (2004), p224.
4. T. Kato, K. Wada, E. Hozomi, H. Taniguchi, T. Miura, S. Nishizawa and K Arai, Materials Science Forum, Vol. 556-557 (2004), 753.
5. S. Nakashima, T. Kato, S. Nishizawa, T. Mitani, H. Okumura and T. Yamamoto, J. Electrochem. Soc., Vol. 153 (2006), G319.