High throughput SiC wafer polishing with good surface morphology

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 753-756

  Kato, Tomohisa ^a   Wada, Keisuke ^a   Hozomi, Eiji ^a   Taniguchi, Hiroyoshi ^a   Miura, Tomonori ^a   Nishizawa, Shin Ichi ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

CMP; Polish; Wafer

Indexed keywords

CHEMICAL MECHANICAL POLISHING; GRINDING (MACHINING); LAPPING; MORPHOLOGY; POLISHING; SILICA; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE MORPHOLOGY;

AFM OBSERVATION; CHEMICAL MECHANICAL POLISHING(CMP); COLLOIDAL SILICA; DIAMOND WHETSTONES; FLAT SURFACES; HIGH THROUGHPUT; WAFER; WAFER POLISHING;

SILICON WAFERS;

EID: 38449087687     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.753     Document Type: Conference Paper

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