Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot

Journal of Physics Condensed Matter

Volumn 21, Issue 4, 2009, Pages

  Rudzinski W ^a  

^a ADAM MICKIEWICZ UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPARALLEL CONFIGURATIONS; CONDUCTANCE PEAKS; COULOMB CORRELATIONS; CURRENT CHARACTERISTICS; ELECTRONIC TUNNELING; ENERGY LEVELS; FERROMAGNETIC ELECTRODES; GATE VOLTAGES; INAS QUANTUM DOTS; KONDO REGIMES; MAGNETIC CONFIGURATIONS; NEGATIVE DIFFERENTIAL CONDUCTANCES; NICKEL ELECTRODES; NON-EQUILIBRIUM GREEN FUNCTIONS; PARALLEL CONFIGURATIONS; QUANTUM DOTS; SPIN-FLIP PROCESS; SPIN-FLIP TRANSITIONS; SPIN-POLARIZED; TUNNEL MAGNETORESISTANCES; TUNNELING JUNCTIONS; TUNNELING PROCESS;

BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRODES; INDIUM ARSENIDE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; POLARIZATION; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; TUNNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 63749125950     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/4/046005     Document Type: Article

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