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Volumn 83, Issue 24, 1999, Pages 5138-5141

Large magnetoresistance ratio in ferromagnetic single-electron transistors in the strong tunneling regime

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001670469     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.5138     Document Type: Article
Times cited : (45)

References (25)
  • 10
    • 0003423226 scopus 로고
    • H. Grabert and M. H. Devoret, NATO Advanced Study Institutes, Ser. B, Plenum, New York
    • G.-L. Ingold and Yu. V. Nazarov in Single Charge Tunneling, H. Grabert and M. H. Devoret, NATO Advanced Study Institutes, Ser. B, Vol. 294 (Plenum, New York, 1992).
    • (1992) Single Charge Tunneling , vol.294
    • Ingold, G.-L.1    Nazarov, Y.V.2
  • 11
    • 0040336142 scopus 로고
    • and references therein
    • G. Schön and A. D. Zaikin, Phys. Rep., 198, 237 (1990), and references therein.
    • (1990) Phys. Rep , vol.198 , pp. 237
    • Schön, G.1    Zaikin, A.D.2
  • 12
    • 0003429007 scopus 로고    scopus 로고
    • X. H. Wang, Phys. Rev. B, 55, 12 868 (1997).
    • (1997) Phys. Rev. B , vol.55 , Issue.12 , pp. 868
    • Wang, X.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.