Strain induced half-metal to semiconductor transition in GdN

Physical Review Letters

Volumn 94, Issue 23, 2005, Pages

  Duan, Chun Gang ^a   Sabiryanov, R F ^a   Liu, Jianjun ^a   Mei, W N ^a   Dowben, P A ^b   Hardy, J R ^b  

^a UNIVERSITY OF NEBRASKA AT OMAHA   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURE; DOPING IMPURITIES;

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; LATTICE CONSTANTS; MAGNETIC PROPERTIES; SEMICONDUCTOR MATERIALS;

GALLIUM NITRIDE;

EID: 27744470810     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.237201     Document Type: Article

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