High power, high gain AlGaN/GaN-HEMTs with novel powerbar design

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 580-582

  Lossy, Richard ^a   Liero, Armin ^a   Würfl, Joachim ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRONICS PACKAGING; GALLIUM NITRIDE; MICROWAVES;

GATE SUPPLY; PACKAGED POWER DEVICE; POWER LOSS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847728633     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A. Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Chakraborty, S. Keller, and U. K. Mishra, "Power and Linearity Characteristics of Field-PlatedRecessed-Gate AlGaN-GaN HEMTs" EDL25(5), 229(2004)
2. K. Joshin, T. Kikkawa, H. Hayashi, S. Yokogawa, M. Yokoyama, N. Adachi, and M. Takikawa, "A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications," in IEDM Tech. Dig., pp. 983-985, Dec. 2003.
3. R. Lossy, J. Würfl, N. Chaturvedi, S. Müller and K. Köhler, "Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates", physica status solidi (a) Vol.194 (2), 2002.
4. Richard Lossy, Peter Heymann, Klaus Köhler, Armin Liero, Stefan Müller and Joachim Würfl, "AlGaN/GaN HEMTs on Silicon Carbide Substrates for Microwave Power Operation",Digest of GaAsMANTECH 2003 p.327, published by GaAsMANTECH Inc.