Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 460-463

  Lossy, R ^a   Chaturvedi, N ^a   Heymann, P ^a   Wurfl J ^a   Muller S ^b   Kohler K ^b  

^a FBI fur Hochstfrequenztechnik   (Germany)

^b FIAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; LITHOGRAPHY; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; POWER DENSITY; POWER LEVEL; STEPPER LITHOGRAPHY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036960707     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<460::AID-PSSA460>3.0.CO;2-R     Document Type: Article

References (5)

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5. S. Yngvesson, Microwave Semiconductor Devices, Kluwer Academic Publ., Dordrecht 1991.