Nanoparticle-induced resonant tunneling behaviors in small molecule organic light-emitting devices

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Zheng, Tianhang ^a   Choy, Wallace C H ^a   Sun, Yuxiu ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CURRENT DENSITY; LIGHT EMISSION; NANOPARTICLES; RESONANT TUNNELING; TIN; TITANIUM COMPOUNDS;

AG NANOPARTICLES; CHARGE TRAPPING EFFECTS; CURRENT VOLTAGES; EMISSION CHARACTERISTICS; HOLE TRANSPORT LAYERS; HYBRID DEVICES; INDIUM TIN OXIDES; OPTIMIZED DEVICES; ORGANIC LAYERS; ORGANIC LIGHT-EMITTING DEVICES; PEAK WIDTHS; PEAK-TO-VALLEY CURRENT RATIOS; SMALL MOLECULES;

SILVER;

EID: 63549092861     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3099038     Document Type: Article

References (19)

1. S. Chen, R. W. Murray, and S. W. Feldberg, J. Phys. Chem. B 102, 9898 (1998).
2. S. Kuhn, U. Hakanson, L. Rogobete, and V. Sandoghdar, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.97.017402 97, 017402 (2006).
3. R. J. Tseng, J. Ouyang, C. W. Chu, J. Huang, and Y. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.2187407 88, 123506 (2006).
4. C. H. Tu, D. L. Kwong, and Y. S. Lai, Appl. Phys. Lett. 0003-6951 10.1063/1.2409366 89, 252107 (2006).
5. L. D. Bozano, B. W. Kean, V. R. Deline, J. R. Salem, and J. C. Scott, Appl. Phys. Lett. 0003-6951 10.1063/1.1643547 84, 607 (2004).
6. J. Ouyang, C. W. Chu, D. Sieves, and Y. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.1887819 86, 123507 (2005).
7. T. J. Park, Y. K. Lee, S. K. Kwon, J. H. Kwon, and J. Jang, Appl. Phys. Lett. 0003-6951 10.1063/1.2358936 89, 151114 (2006).
8. S. Y. Ryu, S. J. Jo, C. S. Kim, S. H. Choi, J. H. Noh, H. K. Baik, H. S. Jeong, D. W. Han, S. Y. Song, and K. S. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2776347 91, 093515 (2007).
9. T. Kondo, S. M. Lee, M. Malicki, B. Domercq, S. R. Marder, and B. Kippelen, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200700567 18, 1112 (2008).
10. J. P. Sun, G. I. Haddad, P. Mazumder, and J. N. Schulman, Proc. IEEE 0018-9219 10.1109/5.663541 86, 641 (1998).
11. S. Sun, H. Zeng, D. B. Robinson, S. Raoux, P. M. Rice, S. X. Wang, and G. Li, J. Am. Chem. Soc. 0002-7863 10.1021/ja0380852 126, 273 (2004).
12. T. H. Zheng and W. C. H. Choy, J. Phys. D 0022-3727 10.1088/0022-3727/41/ 5/055103 41, 055103 (2008).
13. W. C. H. Choy and T. H. Zheng, U.S. Provisional Patent Application No. 61/097, 405 (2008).
14. M. W. Dashiell, J. Kolodzey, P. Crozat, F. Aniel, and J. M. Lourtioz, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.1004234 23, 357 (2002).
15. T. Matsushima, Y. Kinoshita, and H. Murata, Appl. Phys. Lett. 0003-6951 10.1063/1.2825275 91, 253504 (2007).
16. H. Yamamoto, H. Kasajima, W. Yokoyama, H. Sasabe, and C. Adachi, Appl. Phys. Lett. 0003-6951 10.1063/1.1866230 86, 083502 (2005).
17. S. T. Zhang, Z. J. Wang, J. M. Zhao, Y. Q. Zhan, Y. Wu, Y. C. Zhou, X. M. Ding, and X. Y. Hou, Appl. Phys. Lett. 0003-6951 10.1063/1.1699472 84, 2916 (2004).
18. S. C. Tse, H. H. Fong, and S. K. So, J. Appl. Phys. 0021-8979 10.1063/1.1589175 94, 2033 (2003).
19. S. Luryi, Appl. Phys. Lett. 0003-6951 10.1063/1.96102 47, 490 (1985).