The growth of GaN nanowires by LiF-assisted CVD

Chemical Vapor Deposition

Volumn 15, Issue 1-3, 2009, Pages 11-14

  Kuo, Dong Hau ^a   Wu, Wun Hao ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; NANOWIRES; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH MODES; GROWTH OF GAN; IN-SITU; PHASE IDENTIFICATIONS; TEM; TRACE AMOUNTS; VLS MECHANISMS;

CHEMICAL VAPOR DEPOSITION;

EID: 63449140083     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200804270     Document Type: Article

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