Low-temperature epitaxial Si absorber layers grown by electron-cyclotron resonance chemical vapor deposition

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1237-1240

  Rau, B ^a   Selle, B ^a   Knipper, U ^a   Brehme, S ^a   Sieber, I ^a   Stoger M ^b   Schattschneider, P ^b   Gall, S ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; ELECTRON-CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION (ECRCVD); EPITAXIAL FILMS;

CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; POLYSILICON; THIN FILMS;

SOLAR CELLS;

EID: 6344293995     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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