Low-temperature epitaxial thickening of sub-micron poly-SI seeding layers on glass made by aluminium-induced crystallisation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 351-354

  Harder, N P ^a   Xia, J A ^a   Oelting, S ^b   Nast, O ^c   Widenborg, P ^a   Aberle, A G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b ANTEC GmbH   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ION BEAM ASSISTED DEPOSITION; POLYCRYSTALLINE MATERIALS; SPUTTERING; TEMPERATURE; THIN FILMS;

EPITAXIAL THICKENING; ION ASSISTED DEPOSITION; LOW TEMPERATURES; POLYCRYSTALLINE SILICON (POLY-SI); SEEDING LAYERS; SOFTENING POINTS; TECHNOLOGICAL BREAKTHROUGHS; THIN FILM SOLAR CELLS;

GLASS;

EID: 84949565955     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915836     Document Type: Conference Paper

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