Yield point and dislocation velocity of diamond and zincblende semiconductors in different temperatureregimes

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 82, Issue 7, 2002, Pages 1299-1316

  Siethoff, Hans ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISLOCATIONS (CRYSTALS); GERMANIUM; INDIUM COMPOUNDS; MELTING; PHASE TRANSITIONS; SEMICONDUCTOR MATERIALS; SILICON; STRAIN RATE; THERMAL EFFECTS; YIELD STRESS; ZINC COMPOUNDS;

DISLOCATION VELOCITY; MELTING POINT; ZINCBLENDE SEMICONDUCTORS;

DIAMONDS;

EID: 0037053490     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610208235673     Document Type: Article

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