The interaction of boron and phosphorus with dislocations in silicon

Materials Science and Engineering: A

Volumn 355, Issue 1-2, 2003, Pages 311-314

  Siethoff, Hans ^a   Brion, Hans Georg ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Deformation models; Influence of doping; Interaction of impurity atmospheres with dislocations; Plasticity of silicon

Indexed keywords

DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); PHOSPHORUS; SILICON;

TEMPERATURE DEPENDENCE;

BORON;

BORON; DEFORMATION; DISLOCATION; PHOSPHATE; SILICON;

EID: 0038607563     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(03)00083-2     Document Type: Article

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