Defects properties in plastically deformed silicon studied by positron lifetime measurements

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 358-366

  Wang, Z ^a,b   Leipner, H S ^a   Krause Rehberg, R ^a   Bodarenko, V ^a   Gu, H ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b WUHAN UNIVERSITY   (China)

Author keywords

Dislocation; Plastic deformation; Point defects; Positron annihilation; Silicon

Indexed keywords

ANNEALING; DEFORMATION; HEAT TREATMENT; POSITRONS; SEMICONDUCTING SILICON;

POSITRON ANNIHILATION;

CRYSTAL DEFECTS;

EID: 0037393302     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00942-5     Document Type: Conference Paper

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