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Solid State Phenomena

Volumn 76-77, Issue , 2001, Pages 1-6

Defects and contamination in microelectronic device production: State-of-the-art and prospects

(3) Kolbesen, B O a Cerva, H b Zoth, G c

a GOETHE UNIVERSITY (Germany)

b SIEMENS AG (Germany)

c INFINEON TECHNOLOGIES AG (Germany)

Author keywords

Dislocation; DRAMs; Electrical failures; Extended crystalline defects; Material speculations; Metal contamination; Metal precipitates; Physical analysis; Process chemicals; Process optimization; Stacking fault; Transmission electron microscopy TEM; Trenches; Tungsten wormholes; Vertical bird's beak

Indexed keywords

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); DYNAMIC RANDOM ACCESS STORAGE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALS; MICROELECTRONICS; OPTIMIZATION; SILICIDES; SILICON WAFERS; STACKING FAULTS; TRENCHING;

CRYSTALLINE DEFECTS; ELECTRICAL FAILURES; METAL CONTAMINATION; METAL PRECIPITATES; PHYSICAL ANALYSIS; PROCESS CHEMICALS; TRANSMISSION ELECTRON MICROSCOPY TEM; VERTICAL BIRD'S BEAK;

CONTAMINATION;

EID: 6344234774 PISSN: 10120394 EISSN: 16629779 Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.76-77.1 Document Type: Conference Paper

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.