Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2841-2845

  Koida, T ^a,b   Uedono, A ^a   Tsukazaki, A ^c   Sota, T ^d   Kawasaki, M ^c,e   Chichibu, S F ^a,b,f  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d WASEDA UNIVERSITY   (Japan)

^e Combinatorial Mat Explor/Technol ^*  (Japan)

^f RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; SCANDIUM COMPOUNDS; SEMICONDUCTING FILMS; SINGLE CRYSTALS; ANNEALING; SCATTERING; STIMULATED EMISSION; SUBSTRATES; ULTRAVIOLET RADIATION;

ANNIHILATION RADIATION; EPILAYERS; PHOTOLUMINESCENCE LIFETIME; LUMINESCENCE SPECTRA; POSITRON ANNIHILATION TECHNIQUES; POSITRON TRAPPING;

ZINC OXIDE;

EID: 6344258317     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405035     Document Type: Conference Paper

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