Fabrication of highly dense Ru thin films by high-temperature metal-organic chemical vapor deposition with NH3 Gas as Ru oxidation suppressing agent

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5482-5486

  Sun, Ho Jung ^a   Kim, Younsoo ^a   Park, Sung Eon ^a   Hong, Kwon ^a   Roh, Jae Sung ^a   Sohn, Hyun Chul ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

MOCVD; NH3; Ru; Ru(od)3; Thin film

Indexed keywords

AGGLOMERATION; AMMONIA; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONDUCTIVITY; ELECTRODES; HEAT TREATMENT; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PERMITTIVITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AUGER ELECTRON SPECTROSCOPY (AES); LIQUID MASS FLOW CONTROLLERS (LMFC); OXIDATION SUPPRESSING AGENTS; TETRAHYDROFURAN;

RUTHENIUM;

EID: 6344249053     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5482     Document Type: Article

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