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Applied Physics A: Materials Science and Processing

Volumn 79, Issue 8, 2004, Pages 2099-2102

Growth of β-Ga 2O 3 nanoparticles by pulsed laser ablation technique

(4) Lam, H M a,c Hong, M H a,b Yuan, S c Chong, T C a,b

a DATA STORAGE INSTITUTE (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP; CHAMBER PRESSURES; NANOPARTICLES;

AGGLOMERATION; ENERGY GAP; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SILICON; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

LASER ABLATION;

EID: 6344226161 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2893-6 Document Type: Article

Times cited : (29)

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