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Chemical Physics Letters

Volumn 367, Issue 1-2, 2003, Pages 219-222

β-Ga2O3 nanowires sheathed with boron nitrogen

(2) Ma, Renzhi a Bando, Yoshio a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037413302 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/S0009-2614(02)01703-7 Document Type: Article

Times cited : (18)

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