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Volumn 311, Issue 7, 2009, Pages 1764-1766

Surface compositional mapping of self-assembled InAs/GaAs quantum rings

Author keywords

A1. Characterization; A1. Growth models; A1. Nanostructures; A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANORINGS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; TWO DIMENSIONAL;

EID: 63349098962     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.198     Document Type: Article
Times cited : (7)

References (28)
  • 19
    • 63349090051 scopus 로고    scopus 로고
    • note
    • Through a comparison of the ring electronic radius estimated in magnetic measurements (14 nm, Ref. [7]) with its geometrical sizes, it was found that it is this crater-shaped core region (size ∼20 nm), rather than the external rims (∼100 nm), which is responsible for the ring-like electronic structure, as explained in Refs. [12,13].
  • 25
    • 63349100490 scopus 로고    scopus 로고
    • note
    • According to Eq. (1), the GaAs substrate contributes to these numbers (with x=0), so that the average x above the substrate is somewhat higher. Besides, the thinner the epilayer, the smaller the measured x, for a given average x. Thus, it is expected that the differences in average x between the thinner center and the thicker rims and planar regions are higher than measured. Correcting for this effect, the average x would range from 0.67 in the hole to about 0.53 away from the ring, resulting also in a more evident double structure in Fig. 2.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.