Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1803-1806

  Haffouz, S ^a   Raymond, S ^a   Lu, Z G ^a   Barrios, P J ^a   Roy Guay, D ^a   Wu, X ^a   Liu, J R ^a   Poitras, D ^a   Wasilewski, Z R ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A1. Low dimensional structures; A2. Nanomaterials; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ARSENIC COMPOUNDS; BANDWIDTH; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; POWER SPECTRUM; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; TELECOMMUNICATION SYSTEMS;

3 DB BANDWIDTHS; A1. LOW-DIMENSIONAL STRUCTURES; A2. NANOMATERIALS; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING GALLIUM ARSENIDE; CW OPERATIONS; EMISSION ENERGIES; EMISSION SPECTRUMS; FULL WIDTH AT HALF-MAXIMUM; INAS QUANTUM DOTS; MULTIPLE LAYERS; NEW APPROACHES; OUTPUT POWER; PEAK WAVELENGTHS; PHOTOLUMINESCENCE SPECTRUM; QUANTUM DOTS; ROOM TEMPERATURES; SUPER LUMINESCENT DIODES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 63349087170     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.107     Document Type: Article

References (17)

1. Povazay B., Hermann B., Unterhuber A., Hofer B., Sattmann H., Zeiler F., Morgan J.E., Falkner-Radler C., Glittenberg C., Blinder S., and Drexler W. J. Biomed. Opt. 12 4 (2007) 04211
2. Drexler W. J. Biomed. Opt. 9 1 (2004) 47
3. Liu N., Jin P., and Wang Z.-G. Electron. Lett. 41 (2005) 25
4. Ray S.K., Groom K.M., Beattie M.D., Liu H.Y., Hopkinson M., and Hogg R.A. IEEE Photonics Technol. Lett. 18 (2006) 1
5. Li L.H., Rossetti M., Fiori A., Occhi L., and Velez C. Electron. Lett. 41 (2005) 1
6. Garcia J.M., Medeiros-Ribeiro G., Schmidt K., Ngo T., Feng J.L., Lorke A., Kotthaus J., and Petroff P.M. Appl. Phys. Lett. 71 14 (1997) 2014
7. Garcia J.M., Mankad T., Holtz P.O., Wellman P.J., and Pettrof P.M. Appl. Phys. Lett. 72 24 (1997) 3172
8. Wasilewski Z., Fafard S., and McCaffrey J.P. J. Crystal Growth 201-202 (1999) 1131
9. Wang L., Rastelli A., and Schmidt O.G. J. Appl. Phys. 100 (2006) 064313
10. Leon R., Kim Y., Yagadish C., Gal M., Zou J., and Cockayne D.J.H. Appl. Phys. Lett. 69 13 (1996) 1888
11. Kosogov A.O., Werner P., Gosele U., Ledentsov N.N., Bimberg D., Ustinov V.M., Egorov A.Y., Zhukov A.E., Kop'ev P.S., Bert N.A., and Alferov Z.I. Appl. Phys. Lett. 69 20 (1996) 3072
12. Leon R., fafard S., Piva P.G., Ruvimov S., and Liliental-Weber Z. Phys. Rev. B 58 8 (1998) R4262
13. Babinski A., Jasinski J., Bozek R., Szepielow A., and Baranowski J.M. Appl. Phys. Lett. 79 16 (2001) 2576
14. Malik S., Roberts C., Murray R., and Pate M. Appl. Phys. Lett. 71 14 (1997) 1987
15. Xu S.J., Wang X.C., Chua S.J., Wang C.H., Fan W.J., Jiang J., and Xie X.G. Appl. Phys. Lett. 72 25 (1998) 3335
16. Yang T., Tatebayashi J., Aoki K., Nishioka M., and Arakawa Y. Appl. Phys. Lett. 90 (2007) 111912
17. Fafard S., Wasilewski Z.R., Ni Allen C., Picard D., Spanner M., McCaffrey J.P., and Piva P.G. Phys. Rev. B 59 23 (1999) 15368