Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 μm

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Yang, Tao ^a   Tatebayashi, Jun ^b   Aoki, Kanna ^b   Nishioka, Masao ^b   Arakawa, Yasuhiko ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

BLUESHIFTS; EMISSION PEAKS; EMISSION PROPERTIES; PROXIMITY CAPPING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947323566     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2713135     Document Type: Article

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