Growth of high-quality ZnO films on Al2O3 (0 0 0 1) by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2163-2166

  Park, J S ^a   Hong, S K ^b   Im, I H ^a   Ha, J S ^a   Lee, H J ^a   Park, S H ^a   Chang, J H ^c   Cho, M W ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Chungnam National University   (South Korea)

^c Korea Maritime University   (South Korea)

Author keywords

A1. Surface structure; A3. Molecular beam epitaxy; B1. Zinc oxide

Indexed keywords

ALUMINUM; BUFFER LAYERS; CHROMIUM; COMMUNICATION CHANNELS (INFORMATION THEORY); CRYSTAL GROWTH; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL LAYERS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; PLASMA APPLICATIONS; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SOIL CONSERVATION; SUBSTRATES; SULFUR COMPOUNDS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

A1. SURFACE STRUCTURE; A3. MOLECULAR BEAM EPITAXY; ATOMIC FORCE MICROSCOPES; B1. ZINC OXIDE; CRYSTAL QUALITIES; DIFFRACTION PEAKS; EPITAXIAL RELATIONSHIPS; FULL WIDTH AT HALF-MAXIMUM; HIGH QUALITIES; PLASMA TREATMENTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONS; ROCKING CURVES; ROOT MEAN SQUARES; X- RAY DIFFRACTIONS; ZNO; ZNO FILMS;

SURFACE MORPHOLOGY;

EID: 63349086690     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.095     Document Type: Article

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