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Volumn 311, Issue 7, 2009, Pages 1822-1824
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Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy
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Author keywords
A1. Low dimensional structures; A3. Chemical beam epitaxy; B1. Phosphides; B2. Semiconducting indium phosphide
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Indexed keywords
ANISOTROPY;
COMPOSITE FILMS;
CRYSTAL GROWTH;
GALLIUM ALLOYS;
INDIUM ARSENIDE;
INDIUM PHOSPHIDE;
PHOSPHORUS COMPOUNDS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR QUANTUM DOTS;
A1. LOW DIMENSIONAL STRUCTURES;
A3. CHEMICAL BEAM EPITAXY;
B1. PHOSPHIDES;
B2. SEMICONDUCTING INDIUM PHOSPHIDE;
EMISSION WAVELENGTHS;
GAAS;
INAS;
INAS QUANTUM DOTS;
INP;
INTERLAYER THICKNESS;
PHOTOLUMINESCENCE EMISSIONS;
QD ARRAYS;
QUANTUM DOT ARRAYS;
ROOM TEMPERATURES;
SELF-ORGANIZED ANISOTROPIC STRAIN ENGINEERINGS;
TELECOM WAVELENGTHS;
CHEMICAL BEAM EPITAXY;
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EID: 63349084762
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.017 Document Type: Article |
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Times cited : (1)
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References (10)
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