Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1688-1691

  Nilsen, T A ^a   Breivik, M ^a   Selvig, E ^b   Fimland, B O ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B1. Gallium compounds; B2. Semiconducting gallium compounds; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; GALLIUM ALLOYS; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; ROTATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TERNARY ALLOYS; TERNARY SYSTEMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

A1. X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. ANTIMONIDES; B1. GALLIUM COMPOUNDS; B2. SEMICONDUCTING GALLIUM COMPOUNDS; B2. SEMICONDUCTING INDIUM COMPOUNDS; B2. SEMICONDUCTING TERNARY COMPOUNDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 63349084537     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.083     Document Type: Article

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