An x-ray rocking curve technique for the absolute characterization of epitaxial layers and single-crystal solids

Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 935-937

  Fatemi, M ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE SAPPHIRE; ABSOLUTE MEASUREMENTS; CRYSTAL ANGLES; GAN FILM; INP; MATERIAL QUALITY; PEAK POSITION; PROOF OF PRINCIPLES; ROCKING CURVES; X RAY DIFFRACTOMETERS; X RAY ROCKING CURVE;

DIFFRACTION; DIFFRACTOMETERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM NITRIDE; LATTICE CONSTANTS; SAPPHIRE; SILICON WAFERS;

SINGLE CRYSTALS;

EID: 79956050800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447012     Document Type: Article

References (21)

1. W. L. Bond, Acta Crystallogr. 13, 814 (1960). acc ACCRA9 0365-110X
2. The DCD used for this work at NRL is a Blake instrument, which was adapted in house some ten years ago with concentric tilt and azimuth movements and a shaft angle encoder. See also: M. Fatemi, Adv. X-Ray Anal. 31, 143 (1988). axr AXRAAA 0376-0308
3. S. Kikuta, K. Kohra, and Y. Sugita, Jpn. J. Appl. Phys. 5, 147 (1966). jja JJAPA5 0021-4922
4. E. Estop, A. Israel, and M. Sauvage, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. A32, 627 (1976). aca ACACBN 0567-7394
5. J. Hornstra and W. J. Bartels, J. Cryst. Growth 44, 513 (1978). jcr JCRGAE 0022-0248
6. W. J. Bartels and W. Nijman, J. Cryst. Growth 44, 518 (1978). jcr JCRGAE 0022-0248
7. M. C. Roberts, F. Lefaucheux, and M. Sauvage, J. Cryst. Growth 52, 976 (1981). jcr JCRGAE 0022-0248
8. M. A. G. Halliwell, in Microscopy of Semiconducting Materials, 1981 Inst. Phys. Conf. Ser. 60, edited by A. G. Cullis and D. C. Joy, 1981, p. 271.
9. D. Y. Parpia, S. J. Barnett, and M. J. Hill, Philos. Mag. A 53, 377 (1986). pma PMAADG 0141-8610
10. M. Fatemi, J. Cryst. Growth 96, 316 (1989). jcr JCRGAE 0022-0248
11. M. Fatemi and R. E. Stahlbush, Appl. Phys. Lett. 58, 825 (1991). apl APPLAB 0003-6951
12. R. Beanland, J. Cryst. Growth 130, 394 (1993). jcr JCRGAE 0022-0248
13. H.-J. Herzog and E. Kasper, J. Cryst. Growth 144, 177 (1994). jcr JCRGAE 0022-0248
14. M. Fatemi, J. Cryst. Growth 169, 196 (1996). jcr JCRGAE 0022-0248
15. R. W. James, in Solid States Physics, edited by F. Seitz (Academic, New York, 1963), pp. 118-121.
16. C. R. Wie, J. Appl. Phys. 66, 985 (1989). jap JAPIAU 0021-8979
17. H. W. Schnopper, J. Appl. Phys. 36, 1415 (1965). jap JAPIAU 0021-8979
18. J. S. Thomsen, in X-ray Spectrometry, edited by L. V. Azároff 1974, p. 67.
19. P. F. Fewster, J. Mater. Sci.: Mater. Electron. 10, 175 (1999). eev JSMEEV 0957-4522
20. M. Fatemi (unpublished). A paper on details of this procedure is under preparation. Readers may also contact the author for advance information.
21. W. E. Lee and K. P. D. Lagerloff, J. Electron Microsc. Tech. 2, 247 (1985). jef JEMTEC 0741-0581