Formation of Ge nanocrystals and evolution of the oxide matrix in as-deposited and annealed LPCVD SiGeO films

Superlattices and Microstructures

Volumn 45, Issue 4-5, 2009, Pages 343-348

  Rodriguez A ^a   Morana, B ^a   Sangrador, J ^a   Rodriguez T ^a   Kling, A ^b   Ortiz, M I ^c   Ballesteros, C ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

Dielectric matrix; Fourier transform infrared spectroscopy; LPCVD; Semiconductor nanocrystals; Transmission electron microscopy

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ELECTRON MICROSCOPES; GERMANIUM; INFRARED SPECTROSCOPY; NANOCRYSTALS; OXIDE FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

DEPOSITED FILMS; DEPOSITION TEMPERATURES; DIELECTRIC MATRIX; FLOW RATIOS; FOURIER-TRANSFORM INFRARED SPECTROSCOPY; GE NANOCRYSTALS; LPCVD; MATRIXES; OXIDE MATRICES; REACTIVE GAS; SEMICONDUCTOR NANOCRYSTALS;

FOURIER TRANSFORMS;

EID: 63149192715     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.10.037     Document Type: Article

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