SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 47-55

Performance evaluation of 15nm gate length double-gate n-MOSFETs with high mobility channels: HIV, Ge and Si

(3) Kim, Donghyun a Krishnamohan, Tejas a,b Saraswat, Krishna C a

a Stanford University (United States)

b INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; ENERGY GAP; GALLIUM ARSENIDE; GERMANIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INDIUM PHOSPHIDE; QUANTUM CHEMISTRY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SI-GE ALLOYS; SILICON;

BALLISTIC TRANSPORTS; DENSITY OF STATE; DEVICE PERFORMANCE; FULL BAND STRUCTURES; GATE CAPACITANCE; HIGH MOBILITY CHANNELS; OXIDE THICKNESS; QUANTUM CONFINEMENT EFFECTS;

MOSFET DEVICES;

EID: 63149129580 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2986752 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.