In-Ga-O based double-heater phase change memory cell

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 33-36

  Wang, S L ^a,c   Chen, C Y ^a   Hsieh, M K ^b   Lee, W C ^b   Kung, A H ^c,d   Peng, L H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Indium gallium oxide; Nonvolatile memory; Phase change memory (PCM)

Indexed keywords

AMORPHOUS MATERIALS; ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; ELECTRIC CONDUCTIVITY; INDIUM; PULSE CODE MODULATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGY;

AMORPHOUS PHASE; CUBIC PHASE; INDIUM GALLIUM OXIDE; INTERNATIONAL CONFERENCES; LOW BIAS; LOW-POWER APPLICATIONS; MEMORY TECHNOLOGY; NON-VOLATILE; NONVOLATILE MEMORY; ORDER-OF MAGNITUDES; PHASE CHANGE MEMORY CELLS; PHASE-CHANGE MATERIALS; PHASE-CHANGE MEMORY (PCM); RESISTANCE RATIOS; SEMICONDUCTOR MEMORIES;

PHASE CHANGE MEMORY;

EID: 50249182137     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.15     Document Type: Conference Paper

References (6)

1. M. H. R. Lankhorst, B. W. S. M. M. Ketelaars, and R. A. M. Wolters, "Low-cost and nanoscale non-volatile memory concept for future silicon chips," Nature Materials, vol. 4, pp. 347-352, Apr 2005.
2. Ovshinsk.Sr, "Reversible Electrical Switching Phenomena in Disordered Structures," Physical Review Letters, vol. 21, pp. 1450-&, 1968.
3. N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, N. Takaura, M. Terao, M. Matsuoka, and M. Moniwa, "Oxygen-doped GeSbTe phase-change memory cells featuring 1.5V/100-μA standard 0.13 μm CMOS operations," presented in Electron Devices Meeting 2005, IEDM Technical Digests, pp. 738-741, 2005.
4. Y. H. Y. Ha, J.H.; Horii, H.; Park, J.H.; Joo, S.H.; Park, S.O.; U-In Chung; Moon, J.T., "An edge contact type cell for Phase Change RAM featuring very low power consumption," VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on, pp. 175- 176 10-12 June 2003
5. K. C. Ryoo, Y. J. Song, J. M. Shin, S. S. Park, D. W. Lim, J. H. Kim, W. I. Park, K. R. Sim, J. H. Jeong, D. H. Kang, J. H. Kong, C. W. Jeong, J. H. Oh, J. H. Park, J. I. Kim, Y. T. Oh, J. S. Kim, S. H. Eun, K. W. Lee, S. P. Koh, Y. Fai, G. H. Koh, G. T. Jeong, H. S. Jeong, and K. Kim, "Ring contact electrode process for high density phase change random access memory," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 46, pp. 2001-2005, Apr 2007.
6. H. T. Stokes, T. A. Case, and D. C. Ailion, "Evidence for Elastic Disorder in the Elastically Ordered Phase of Kcn," Physical Review Letters, vol. 47, pp. 268-271, 1981.